DiodesZetex DMP Type P-Channel MOSFET, 0.6 A, 450 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 182-6920
- Référence fabricant:
- DMP45H21DHE-13
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 2500 unités)*
515,00 €
(TVA exclue)
622,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 24 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,206 € | 515,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 182-6920
- Référence fabricant:
- DMP45H21DHE-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.6A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SOT-223 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.65mm | |
| Width | 3.55 mm | |
| Standards/Approvals | No | |
| Length | 6.55mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.6A | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SOT-223 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.65mm | ||
Width 3.55 mm | ||
Standards/Approvals No | ||
Length 6.55mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
Liens connexes
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