DiodesZetex DMP Type P-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin X1-DFN DMP21D6UFD-7
- N° de stock RS:
- 182-7329
- Référence fabricant:
- DMP21D6UFD-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 100 unités)*
9,70 €
(TVA exclue)
11,70 €
(TVA incluse)
Ajouter 1300 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 1 900 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 100 | 0,097 € | 9,70 € |
| 200 - 400 | 0,085 € | 8,50 € |
| 500 - 900 | 0,068 € | 6,80 € |
| 1000 - 1900 | 0,062 € | 6,20 € |
| 2000 + | 0,057 € | 5,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 182-7329
- Référence fabricant:
- DMP21D6UFD-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 800mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.25 mm | |
| Length | 1.25mm | |
| Height | 0.48mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 800mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.25 mm | ||
Length 1.25mm | ||
Height 0.48mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, -1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
DC-DC Converters
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