DiodesZetex DMP Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerDI5060
- N° de stock RS:
- 182-6921
- Référence fabricant:
- DMP6050SPS-13
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 2500 unités)*
680,00 €
(TVA exclue)
822,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,272 € | 680,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 182-6921
- Référence fabricant:
- DMP6050SPS-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMP | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 2.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMP | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 2.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6mm | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This new generation 60V P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and loadswitch.
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Liens connexes
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