DiodesZetex Dual 2 Type N, Type P-Channel MOSFET, 4.6 A, 30 V Enhancement, 6-Pin TSOT
- N° de stock RS:
- 182-6878
- Référence fabricant:
- DMC3071LVT-7
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 3000 unités)*
273,00 €
(TVA exclue)
330,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,091 € | 273,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 182-6878
- Référence fabricant:
- DMC3071LVT-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 0.9mm | |
| Length | 3mm | |
| Standards/Approvals | UL 94V-0, J-STD-020, MIL-STD-202, RoHS, AEC-Q101 | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 0.9mm | ||
Length 3mm | ||
Standards/Approvals UL 94V-0, J-STD-020, MIL-STD-202, RoHS, AEC-Q101 | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Backlighting
DC-DC Converters
Power Management Functions
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