Vishay Single Type N-Channel Power MOSFET, 27 A, 600 V, 3-Pin TO-247AC IRFP27N60KPBF
- N° de stock RS:
- 180-8633
- Référence fabricant:
- IRFP27N60KPBF
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 180-8633
- Référence fabricant:
- IRFP27N60KPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247AC | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.22Ω | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 500W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Length | 16.25mm | |
| Width | 15.87 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247AC | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.22Ω | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 500W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Length 16.25mm | ||
Width 15.87 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-247AC-3 package is a new age product with a drain-source voltage of 600V and maximum gate-source voltage of 30V. It has a drain-source resistance of 220ohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 500W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Enhanced body diode dV/dt capability
• Fully characterized capacitance and avalanche voltage and current
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• Hard switching and high frequency circuits
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies