Vishay Single 1 Type P-Channel MOSFET, 1.8 A, 400 V, 3-Pin TO-252 IRFR9310PBF
- N° de stock RS:
- 180-8348
- Référence fabricant:
- IRFR9310PBF
- Fabricant:
- Vishay
Sous-total (1 tube de 75 unités)*
39,975 €
(TVA exclue)
48,375 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 900 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 75 + | 0,533 € | 39,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8348
- Référence fabricant:
- IRFR9310PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS-compliant | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 9.65mm | ||
Standards/Approvals RoHS-compliant | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET, 400V Drain Source Voltage, 50W Power Dissipation - IRFR9310PBF
This MOSFET is a P-channel transistor designed for high-voltage switching in power-electronic circuits. It is supplied in a TO-252 package and is suitable for surface-mount or through-hole assembly, offering a compact solution where a P-type device is required for high-voltage applications. The device operates across a wide temperature span and meets RoHS environmental standards.
Features and Benefits:
• 400V drain-to-source voltage for high-voltage switching capability
• 7Ω maximum Rds to limit conduction losses in low-current designs
• 13nC typical gate charge for fast gate-drive transitions
• 1.8A continuous drain current for moderate current requirements
• 50W maximum power dissipation for thermal headroom in power stages
• -55 to 150°C operating range for high-temperature deployment
• 7Ω maximum Rds to limit conduction losses in low-current designs
• 13nC typical gate charge for fast gate-drive transitions
• 1.8A continuous drain current for moderate current requirements
• 50W maximum power dissipation for thermal headroom in power stages
• -55 to 150°C operating range for high-temperature deployment
Applications
• Suitable for high-voltage polarity protection circuits
• Ideal for P-channel high-side switching in power supplies
• Used with gate drivers requiring low gate-charge devices
• Can be used for industrial control electronics operating hot
• Appropriate for mixed-assembly boards combining surface-mount and through-hole components
• Ideal for P-channel high-side switching in power supplies
• Used with gate drivers requiring low gate-charge devices
• Can be used for industrial control electronics operating hot
• Appropriate for mixed-assembly boards combining surface-mount and through-hole components
What mounting options are available for fitting onto PCBs?
The device supports both surface-mount and through-hole mounting methods to accommodate varied board assembly practices.
How does the device perform under elevated ambient temperatures?
It is rated to operate up to 150°C, allowing use in designs exposed to high thermal stress when appropriate thermal management is applied.
What are the gate-drive voltage limits to consider during design?
The maximum gate-to-source voltage is ±20V, so gate-drive circuitry must constrain swings within this range.
Is this device composed of multiple elements on a single chip?
There is a single transistor element per chip, which simplifies current-sharing considerations in parallel arrangements.
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