Vishay Type P-Channel MOSFET, 90 A, 100 V, 3-Pin TO-263 SUM90P10-19L-E3
- N° de stock RS:
- 180-8130
- Référence fabricant:
- SUM90P10-19L-E3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
24,72 €
(TVA exclue)
29,91 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 190 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,944 € | 24,72 € |
| 25 - 45 | 4,45 € | 22,25 € |
| 50 - 120 | 4,202 € | 21,01 € |
| 125 - 245 | 3,956 € | 19,78 € |
| 250 + | 3,708 € | 18,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8130
- Référence fabricant:
- SUM90P10-19L-E3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.019Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 0.625in | |
| Standards/Approvals | RoHS Directive 2002/95/EC | |
| Width | 10.414 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.019Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 0.625in | ||
Standards/Approvals RoHS Directive 2002/95/EC | ||
Width 10.414 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package, is a new-age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 19mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. It can be used in the primary side switch. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Liens connexes
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- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 60 V TO-220AB SUP90P06-09L-E3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263 SUM110P08-11L-E3
- Vishay SUM110P06-08L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
- Vishay Type P-Channel MOSFET 60 V TO-220AB
