Infineon OptiMOS N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1

N° de stock RS:: 178-7481
Référence fabricant:: BSC011N03LSATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1

Sous-total (1 bobine de 5000 unités)*

2 900,00 €

(TVA exclue)

3 500,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 5 000 unité(s) expédiée(s) à partir du 31 octobre 2026

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Unité	Prix par unité	la bobine*
5000 +	0,58 €	2 900,00 €

*Prix donné à titre indicatif

N° de stock RS:: 178-7481
Référence fabricant:: BSC011N03LSATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	96W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.35mm
	Length	6.1mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 96W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.35mm
	Length 6.1mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

BSC030P03NS3G

Statut RoHS : Exempté

Infineon OptiMOS Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC011N03LSATMA1

This MOSFET is a power switching device designed for high-current, low-voltage applications in surface-mount assemblies. It operates across an extended ambient range and is intended for demanding thermal and electrical environments where efficient conduction and rapid switching are required.

Features and Benefits:

• Very low on-resistance 1.4mΩ reduces conduction losses
• High continuous drain capability 100A handles heavy loads
• Peak power dissipation 96W supports elevated power transfer
• Low forward voltage 1V improves conversion efficiency
• Typical gate charge 36nC enables fast gate transitions
• Rated gate tolerance 20V protects against gate overstress

Applications

• Suitable for synchronous buck converters in servers
• Ideal for high-current motor-drive stages
• Used with power distribution modules in telecom racks
• Can be used for DC-DC power conversion in inverters
• Suitable for battery management and charging systems

What thermal limits should designers allow for under sustained operation?

The device is specified to operate between -55°C and 150°C, so thermal management should ensure junction temperatures remain within this range under expected dissipation.

How does the gate charge affect drive requirements?

With a typical gate charge of 36nC, gate drivers must supply adequate charge quickly to achieve desired switching speeds while minimising transition losses.

What mounting considerations are necessary for reliable performance?

The component is supplied in an 8-pin TDSON surface-mount package measuring 6.1 x 5.35mm, so PCB land pattern and solder fillets should accommodate thermal conduction and mechanical stability.

Which electrical ratings dictate maximum switching voltage and current?

The device has a maximum drain-source voltage of 30V and a continuous drain current rating of 100A

switching topologies should remain within these electrical limits.