onsemi Dual 2 Type N-Channel Power MOSFET, 27 A, 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- N° de stock RS:
- 178-4488
- Référence fabricant:
- NVMFD5C478NT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
12,08 €
(TVA exclue)
14,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,208 € | 12,08 € |
| 100 - 240 | 1,042 € | 10,42 € |
| 250 - 490 | 0,904 € | 9,04 € |
| 500 - 990 | 0,794 € | 7,94 € |
| 1000 + | 0,722 € | 7,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4488
- Référence fabricant:
- NVMFD5C478NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.84V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.84V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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