onsemi NVMFS5C468N Type N-Channel MOSFET, 35 A, 40 V Enhancement, 5-Pin DFN
- N° de stock RS:
- 178-4304
- Référence fabricant:
- NVMFS5C468NT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 1500 unités)*
733,50 €
(TVA exclue)
888,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 0,489 € | 733,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4304
- Référence fabricant:
- NVMFS5C468NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFS5C468N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFS5C468N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver – ABS, Fuel Injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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