Vishay P-Channel MOSFET, 700 mA, 100 V, 4-Pin HVMDIP IRFD9110PBF

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Actuellement indisponible
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N° de stock RS:
178-0920
Référence fabricant:
IRFD9110PBF
Fabricant:
Vishay
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Marque

Vishay

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.7 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centres.

Dynamic dV/dt rating
Repetitive avalanche rated


MOSFET Transistors, Vishay Semiconductor

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