Vishay IRFI Type P-Channel MOSFET, 2 A, 200 V Enhancement, 3-Pin TO-220 IRFI9610GPBF
- N° de stock RS:
- 178-0862
- Référence fabricant:
- IRFI9610GPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
82,20 €
(TVA exclue)
99,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 50 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,644 € | 82,20 € |
| 100 - 200 | 1,545 € | 77,25 € |
| 250 - 450 | 1,398 € | 69,90 € |
| 500 - 1200 | 1,315 € | 65,75 € |
| 1250 + | 1,233 € | 61,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0862
- Référence fabricant:
- IRFI9610GPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | IRFI | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 27W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | -5.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Length | 10.63mm | |
| Height | 9.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series IRFI | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 27W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf -5.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Length 10.63mm | ||
Height 9.8mm | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
Dynamic dV/dt rating
Low thermal resistance
Liens connexes
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