Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF

N° de stock RS:: 177-7558
Référence fabricant:: IRFR320TRPBF
Fabricant:: Vishay

Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF

Sous-total (1 bobine de 2000 unités)*

936,00 €

(TVA exclue)

1 132,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 14 décembre 2026

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Unité	Prix par unité	la bobine*
2000 +	0,468 €	936,00 €

*Prix donné à titre indicatif

N° de stock RS:: 177-7558
Référence fabricant:: IRFR320TRPBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-252
	Series	IRFR320
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	42W
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Height	2.38mm
	Standards/Approvals	RoHS
	Width	6.22mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-252
	Series IRFR320
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 42W
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Height 2.38mm
	Standards/Approvals RoHS
	Width 6.22mm
	Automotive Standard No

IRFR320, IRFU320, SiHFR320, SiHFU320, Power MOSFET

Vishay IRFR320 Series Power MOSFET, 400V Drain Source Voltage, 3.1A Continuous Drain Current - IRFR320TRPBF

This power MOSFET is a high-voltage switching transistor intended for surface-mount board assemblies in power conversion and control circuits. It operates as an N-channel enhancement device and is designed to handle elevated drain-to-source voltages and moderate continuous currents, making it suitable for switching and energy-management roles in industrial and consumer electronics.

Features and Benefits:

• 400V maximum drain-to-source voltage enables high-voltage switching capability
• 3.1A continuous drain current supports moderate load currents
• 1.8Ω maximum Rds(on) reduces conduction losses under load
• 42W maximum power dissipation allows sustained thermal handling
• 20nC typical gate charge enables predictable switching behaviour
• 20V gate-source limit ensures compatibility with standard gate drivers

Applications

• Suitable for switch-mode power supplies and converters
• Ideal for motor control in low-power systems
• Used for primary-side power switching in industrial equipment
• Can be used for electronic load protection circuits
• Appropriate for high-voltage relay replacement on boards

What thermal range can be expected for operation?

The device is specified to function between -55°C and 150°C, permitting use across extended temperature environments.

How is the component packaged for assembly?

It is supplied in a three-pin TO-252 surface-mount package suitable for automated PCB placement.

What gate drive considerations are necessary?

Drivers should respect a maximum gate-source rating of 20V and account for the typical 20nC gate charge when sizing drive current and switching speed.

Is this suitable for automotive-grade designs?

The part does not meet automotive standards, so it is not intended for certified automotive system use.