ROHM TT8K11 Dual N-Channel MOSFET, 3 A, 30 V, 8-Pin TSST TT8K11TCR

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
171-9930
Référence fabricant:
TT8K11TCR
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Series

TT8K11

Package Type

TSST

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

109 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

0.8mm

Forward Diode Voltage

1.2V

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

4Ｖ-drive type
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Applications:
Portable Data Terminal
Coin Processing Machines
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Embedded PC
Smart Meter
Surveillance Camera
X-ray Inspection Machine for Security
Surveillance Camera for Network
Intercom / Baby Monitor
Machine Vision Camera for Industrial
Fingerprint Authentication Device
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters

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