ROHM Dual 2 Type N-Channel Power MOSFET, 1 A, 30 V Enhancement, 6-Pin TSMT
- N° de stock RS:
- 168-2133
- Référence fabricant:
- QS6K1TR
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
8,125 €
(TVA exclue)
9,825 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 50 | 0,325 € | 8,13 € |
| 75 - 125 | 0,299 € | 7,48 € |
| 150 + | 0,264 € | 6,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-2133
- Référence fabricant:
- QS6K1TR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 238mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 0.95mm | |
| Width | 1.8 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 238mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 0.95mm | ||
Width 1.8 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Complex type MOSFETs(N+N) are MADE as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering Compact types, high-power types and complex types to meet various needs in the market.
2.5Ｖ-drive type
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Applications:
Portable Data Terminal
Coin Processing Machines
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Embedded PC
Smart Meter
Surveillance Camera
X-ray Inspection Machine for Security
Surveillance Camera for Network
Intercom / Baby Monitor
Machine Vision Camera for Industrial
Fingerprint Authentication Device
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters
Liens connexes
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