ROHM UT6K30 Dual N-Channel MOSFET, 3 A, 60 V, 8-Pin DFN2020, HUML2020L UT6K30TCR
- N° de stock RS:
- 171-9912
- Référence fabricant:
- UT6K30TCR
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
20,05 €
(TVA exclue)
24,25 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 350 | 0,802 € | 20,05 € |
| 375 - 725 | 0,722 € | 18,05 € |
| 750 - 1475 | 0,658 € | 16,45 € |
| 1500 - 2475 | 0,603 € | 15,08 € |
| 2500 + | 0,572 € | 14,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-9912
- Référence fabricant:
- UT6K30TCR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | UT6K30 | |
| Package Type | DFN2020, HUML2020L | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 223 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.7V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 2 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 2.1mm | |
| Width | 2.1mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 10 V (N Channel, P Channel) | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 60 V | ||
Series UT6K30 | ||
Package Type DFN2020, HUML2020L | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 223 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.7V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2 W | ||
Maximum Gate Source Voltage ±20 V | ||
Length 2.1mm | ||
Width 2.1mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 2.1 nC @ 10 V (N Channel, P Channel) | ||
Forward Diode Voltage 1.2V | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
UT6K30 is low on - resistance and small surface mount package MOSFET. It is suitable for switching application and DC/DC Converter.
Low on - resistance
Small Surface Mount Package
Pb-free lead plating
Halogen Free
Small Surface Mount Package
Pb-free lead plating
Halogen Free
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