onsemi NVMFS5C670NL Type N-Channel MOSFET, 71 A, 60 V Enhancement, 5-Pin DFN NVMFS5C670NLWFAFT1G
- N° de stock RS:
- 171-8388
- Référence fabricant:
- NVMFS5C670NLWFAFT1G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
33,92 €
(TVA exclue)
41,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 300 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 1,696 € | 33,92 € |
| 200 - 480 | 1,462 € | 29,24 € |
| 500 + | 1,267 € | 25,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-8388
- Référence fabricant:
- NVMFS5C670NLWFAFT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFS5C670NL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 61W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFS5C670NL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 61W | ||
Maximum Operating Temperature 175°C | ||
Width 5.1mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.
Low RDS(on)
Minimize Conduction Losses
Low QG and Gate capacitance
Minimize Switching Losses
Industry standard 5x6mm package Industry
Compact Design and Standard footprint for direct drop-in
Best in-class FOM (RDS(ON) x QG)
Increased efficiency, lower power dissipation
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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