Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V Enhancement, 3-Pin SOT-23 PMV16XNR
- N° de stock RS:
- 170-5355
- Référence fabricant:
- PMV16XNR
- Fabricant:
- Nexperia
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 50 unités)*
15,25 €
(TVA exclue)
18,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 200 | 0,305 € | 15,25 € |
| 250 - 450 | 0,141 € | 7,05 € |
| 500 - 1200 | 0,134 € | 6,70 € |
| 1250 - 2450 | 0,118 € | 5,90 € |
| 2500 + | 0,115 € | 5,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-5355
- Référence fabricant:
- PMV16XNR
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PMV16XN | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.94W | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PMV16XN | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.94W | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
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