Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1
- N° de stock RS:
- 170-2342
- Référence fabricant:
- BSZ097N10NS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
9,47 €
(TVA exclue)
11,46 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 790 unité(s) expédiée(s) à partir du 01 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,947 € | 9,47 € |
| 50 - 90 | 0,766 € | 7,66 € |
| 100 - 240 | 0,719 € | 7,19 € |
| 250 - 490 | 0,662 € | 6,62 € |
| 500 + | 0,616 € | 6,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-2342
- Référence fabricant:
- BSZ097N10NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSZ097N10NS5 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSZ097N10NS5 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
OptiMOS™ 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industrys lowest R DS(on)
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Liens connexes
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