Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON
- N° de stock RS:
- 170-2300
- Référence fabricant:
- BSZ097N10NS5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 980,00 €
(TVA exclue)
3 605,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,596 € | 2 980,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-2300
- Référence fabricant:
- BSZ097N10NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSZ097N10NS5 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSZ097N10NS5 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Automotive Standard No | ||
OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Liens connexes
- Infineon BSZ097N10NS5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON IPZ40N04S5L4R8ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON BSZ097N04LSGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON