Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3

N° de stock RS:: 169-5791
Référence fabricant:: SIHG20N50E-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3

Sous-total (1 tube de 25 unités)*

63,30 €

(TVA exclue)

76,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 175 unité(s) expédiée(s) à partir du 07 août 2026

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Unité	Prix par unité	le tube*
25 +	2,532 €	63,30 €

*Prix donné à titre indicatif

N° de stock RS:: 169-5791
Référence fabricant:: SIHG20N50E-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-247AC
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	5.31mm
	Height	20.82mm
	Length	15.87mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-247AC
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 5.31mm
	Height 20.82mm
	Length 15.87mm
	Standards/Approvals RoHS
	Automotive Standard No

Pays d'origine :: CN

Vishay Series E Power MOSFET, 500V Drain Source Voltage, 19A Continuous Drain Current - SIHG20N50E-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for power conversion and switching applications. It offers robust switching capability suitable for through-hole mounting in conventional assemblies and operates across a wide ambient temperature range for demanding electronic environments.

Features and Benefits:

• 500V drain capability supports high-voltage power stages
• 19A continuous drain current enables substantial load handling
• 179W power dissipation allows high-power operation
• 184mΩ maximum RDS(on) minimises conduction losses
• 46nC typical gate charge reduces switching control energy
• 30V maximum gate rating permits standard gate drive voltages

Applications

• Suitable for power electronics MOSFETs for switching supplies
• Ideal for through-hole TO-247 power transistor 500V assemblies
• Used with high-voltage inverter and motor-drive stages
• Can be used for industrial power supplies and converters
• Used for legacy through-hole repairs and prototype boards

What are the thermal limits for deployment in hot environments?

It is specified to function from -55°C up to 150°C, permitting operation in elevated-temperature systems.

Which mounting method is required for reliable installation?

The device uses through-hole mounting in a TO-247AC package, compatible with standard wave or manual soldering processes and heatsinking arrangements.

What gate-drive considerations should I allow for during design?

Design for a maximum gate-source rating of 30V and account for a typical gate charge of 46nC when sizing drive circuitry.

How does the part comply with material restrictions for manufacturing?

It is RoHS-compliant, meeting material restriction requirements for environmental regulations.