Infineon CoolMOS™ C3 N-Channel MOSFET, 7.3 A, 650 V, 3-Pin IPAK SPU07N60C3BKMA1

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N° de stock RS:
168-8581
Référence fabricant:
SPU07N60C3BKMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.3 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C3

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Transistor Material

Si

Width

2.41mm

Length

6.73mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

6.22mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Statut RoHS non applicable

Pays d'origine :
CN

Infineon CoolMOS™C3 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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