Infineon CoolMOS C3 Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 165-7676
- Référence fabricant:
- SPA11N60C3XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
110,55 €
(TVA exclue)
133,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 500 unité(s) expédiée(s) à partir du 09 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,211 € | 110,55 € |
| 100 - 200 | 2,10 € | 105,00 € |
| 250 + | 1,968 € | 98,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-7676
- Référence fabricant:
- SPA11N60C3XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.83mm | |
| Length | 10.65mm | |
| Width | 4.85 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.83mm | ||
Length 10.65mm | ||
Width 4.85 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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