Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263

N° de stock RS:: 168-6012
Référence fabricant:: IRFS4010TRLPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263

Sous-total (1 bobine de 800 unités)*

905,60 €

(TVA exclue)

1 096,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 19 octobre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
800 +	1,132 €	905,60 €

*Prix donné à titre indicatif

N° de stock RS:: 168-6012
Référence fabricant:: IRFS4010TRLPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	143nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 143nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFS4010TRLPBF

This high-power MOSFET delivers strong performance across various applications, essential for contemporary electronic systems. Its enhancement mode operation and Advanced HEXFET technology provide efficient power management, making it suitable for applications that require dependable power control.

Features & Benefits

• Supports continuous drain current up to 180A for substantial loads

• Maximum drain-source voltage rated at 100V for flexibility

• Low Rds(on) of 4.7mΩ minimises power loss during operation

• Designed in a single configuration for easier integration

• Handles temperatures up to +175°C effectively

• Capable of high-speed power switching for efficient operations

Applications

• Used in synchronous rectification for switched-mode power supplies

• Suitable for uninterruptible power supply systems

• Applied in hard-switched and high-frequency circuits

• Utilised in automation equipment that needs efficient power management

• Integrates well into diverse electrical and mechanical projects

How does the resistance affect performance in high-frequency applications?

A low Rds(on) notably reduces heat generation and power loss, enhancing the efficiency of high-frequency power converters.

What gate voltage is required to ensure optimal operation?

The device operates effectively with a gate-source voltage between 2V and 4V, with 10V recommended for maximum efficiency.

Is installation straightforward for this component?

Yes, this surface mount MOSFET is designed for easy placement on PCBs, allowing for quick and reliable setups in various devices.

Can it handle thermal management effectively?

With a maximum operating junction temperature of +175°C, it is suitable for use in environments that require solid thermal performance.

What types of circuits can benefit from incorporating this component?

It is Ideal for high-speed switching applications, load driver circuits, and power management systems in automation and electrical fields.