IXYS X2-Class Type N-Channel MOSFET, 76 A, 650 V Enhancement, 4-Pin SOT-227
- N° de stock RS:
- 168-4820
- Référence fabricant:
- IXTN102N65X2
- Fabricant:
- IXYS
Sous-total (1 tube de 10 unités)*
264,47 €
(TVA exclue)
320,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 50 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 10 + | 26,447 € | 264,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-4820
- Référence fabricant:
- IXTN102N65X2
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | SOT-227 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 152nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 595W | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.42 mm | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type SOT-227 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 152nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 595W | ||
Maximum Operating Temperature 150°C | ||
Width 25.42 mm | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Liens connexes
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXTN102N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin PLUS247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin ISOPLUS247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin PLUS247 IXTX120N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin ISOPLUS247 IXTR102N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264