PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	22 A, 30 A
	Maximum Drain Source Voltage	30 V
	Series	PowerTrench
	Package Type	PQFN8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	8.6 mΩ, 13.9 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	2.2 W, 2.5 W
	Transistor Configuration	Series
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	6mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	18 nC @ 10 V, 21 nC @ 10 V
	Length	5mm
	Number of Elements per Chip	2
	Minimum Operating Temperature	-55 °C
	Height	0.725mm

	Sélectionner tout
	Marque onsemi
	Channel Type N
	Maximum Continuous Drain Current 22 A, 30 A
	Maximum Drain Source Voltage 30 V
	Series PowerTrench
	Package Type PQFN8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 8.6 mΩ, 13.9 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 2.2 W, 2.5 W
	Transistor Configuration Series
	Maximum Gate Source Voltage -20 V, +20 V
	Width 6mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 18 nC @ 10 V, 21 nC @ 10 V
	Length 5mm
	Number of Elements per Chip 2
	Minimum Operating Temperature -55 °C
	Height 0.725mm

onsemi PowerTrench Dual N-Channel MOSFET, 22 A, 30 A, 30 V, 8-Pin PQFN8 FDMS7608S

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

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