PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	150V
	Package Type	WDFN
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	94mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.3V
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	104W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Operating Temperature	150°C
	Width	5.85 mm
	Height	1.05mm
	Length	5mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 150V
	Package Type WDFN
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 94mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.3V
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 104W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Operating Temperature 150°C
	Width 5.85 mm
	Height 1.05mm
	Length 5mm
	Standards/Approvals No
	Automotive Standard No

onsemi PowerTrench Type P-Channel MOSFET, 22 A, 150 V Enhancement, 8-Pin WDFN FDMS86263P

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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