onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

632,50 €

(TVA exclue)

765,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2500 +0,253 €632,50 €

*Prix donné à titre indicatif

N° de stock RS:
166-3195
Référence fabricant:
RFD3055LESM9A
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

60V

Series

RFD3055LESM

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

107mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.39mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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