onsemi UniFET Type P-Channel MOSFET, 460 mA, 25 V Enhancement, 3-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

249,00 €

(TVA exclue)

300,00 €

(TVA incluse)

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Prix par unité
la bobine*
3000 - 30000,083 €249,00 €
6000 +0,078 €234,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-1711
Référence fabricant:
FDV304P
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

460mA

Maximum Drain Source Voltage Vds

25V

Package Type

SOT-23

Series

UniFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

350mW

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

0.93mm

Standards/Approvals

No

Width

1.3 mm

Length

2.92mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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