Dual N/P-Channel-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK Diodes Inc DMG4511SK4-13

N° de stock RS:: 165-8875
Référence fabricant:: DMG4511SK4-13
Fabricant:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK Diodes Inc DMG4511SK4-13

Prix L'unité (sur une bobine de 2500)

0,282 €

(TVA exclue)

0,341 €

(TVA incluse)

7440 En stock pour livraison sous 4 jour(s)

Unité	Prix par unité	la bobine*
2500 +	0,282 €	705,00 €

*prix conseillé

N° de stock RS:: 165-8875
Référence fabricant:: DMG4511SK4-13
Fabricant:: DiodesZetex

DMG4511SK4, Complementary Pair Enhancement Mode MOSFET
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N, P
Maximum Continuous Drain Current	9.3 A, 9.6 A
Maximum Drain Source Voltage	35 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	8.9 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Length	6.7mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	18.7 nC @ 10 V, 19.2 nC @ 10 V
Width	6.2mm
Height	2.39mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK Diodes Inc DMG4511SK4-13

Dual N/P-Channel MOSFET, Diodes Inc.