Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-220 IPP039N04LGXKSA1

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N° de stock RS:
165-8156
Référence fabricant:
IPP039N04LGXKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

OptiMOS 3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.92V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Width

4.572 mm

Height

15.95mm

Length

10.36mm

Automotive Standard

No

Pays d'origine :
CN

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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