Nexperia BUK9M3580E Type N-Channel MOSFET, 26 A, 80 V Enhancement, 4-Pin LFPAK

Voir l’ensemble des MOSFETs
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
N° de stock RS:
152-7741
Référence fabricant:
BUK9M35-80EX
Fabricant:
Nexperia
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

80V

Package Type

LFPAK

Series

BUK9M3580E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

15 V

Typical Gate Charge Qg @ Vgs

13.5nC

Maximum Power Dissipation Pd

62W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

2.6 mm

Length

3.4mm

Standards/Approvals

No

Height

0.9mm

Automotive Standard

AEC-Q101

N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

Liens connexes