IXYS HiperFET Type N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X

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N° de stock RS:
146-4374
Numéro d'article Distrelec:
302-53-353
Référence fabricant:
IXFK66N85X
Fabricant:
IXYS
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Marque

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

850V

Series

HiperFET

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

1.25kW

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

26.3mm

Standards/Approvals

No

Length

20.3mm

Width

5.3 mm

Distrelec Product Id

30253353

Automotive Standard

No

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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