IXYS HiperFET N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXFK66N85X

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N° de stock RS:
146-4244
Référence fabricant:
IXFK66N85X
Fabricant:
IXYS
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Marque

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

850 V

Package Type

TO-264

Series

HiperFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.3mm

Number of Elements per Chip

1

Length

20.3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

230 nC @ 10 V

Height

26.3mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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