onsemi UniFET N-Channel MOSFET, 5.5 A, 600 V, 3-Pin IPAK FDU7N60NZTU

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
145-4602
Référence fabricant:
FDU7N60NZTU
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Series

UniFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.25 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

2.5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.8mm

Height

7.57mm

Minimum Operating Temperature

-55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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