onsemi UltraFET Type N-Channel MOSFET, 75 A, 100 V Enhancement, 3-Pin TO-247

Sous-total (1 tube de 30 unités)*

155,07 €

(TVA exclue)

187,62 €

(TVA incluse)

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Unité
Prix par unité
le tube*
30 +5,169 €155,07 €

*Prix donné à titre indicatif

N° de stock RS:
145-4392
Référence fabricant:
HUF75652G3
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-247

Series

UltraFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

393nC

Forward Voltage Vf

1.25V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

515W

Maximum Operating Temperature

175°C

Height

20.82mm

Standards/Approvals

No

Length

15.87mm

Width

4.82 mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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