Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
136-2144
Référence fabricant:
NX3008CBKS,115
Fabricant:
Nexperia
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Marque

Nexperia

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Width

1.35mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Pays d'origine :
MY
Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA)

Ultra small 1006 sized SOT883 (SC-101) leadless package
Broad choice of SMD and leaded package options
Wide range of double and single functions
More than 300 different products

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2
AEC-Q101 qualified

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