Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF
- N° de stock RS:
- 124-9025
- Référence fabricant:
- IRLB3036PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
141,00 €
(TVA exclue)
170,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 000 unité(s) expédiée(s) à partir du 03 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,82 € | 141,00 € |
| 100 - 200 | 2,172 € | 108,60 € |
| 250 + | 2,03 € | 101,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-9025
- Référence fabricant:
- IRLB3036PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 380W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 380W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 270A Maximum Continuous Drain Current - IRLB3036PBF
This MOSFET is a power-switching transistor designed for high-current, low-loss switching in industrial environments. It is an N-channel enhancement device housed in a through-hole TO-220 package, intended for applications requiring substantial continuous drain current and robust thermal endurance across a wide ambient range.
Features and Benefits:
• Very low on-resistance 2 mΩ for reduced conduction losses
• High continuous drain current 270A to handle heavy loads
• 380W maximum power dissipation for high-power switching
• 60V drain-source voltage rating for moderate-voltage systems
• Typical gate charge 91 nC enabling predictable switching behaviour
• High continuous drain current 270A to handle heavy loads
• 380W maximum power dissipation for high-power switching
• 60V drain-source voltage rating for moderate-voltage systems
• Typical gate charge 91 nC enabling predictable switching behaviour
Applications
• Suitable for motor-drive stages in industrial equipment
• Ideal for power supplies and DC-DC converters
• Used with high-current switching in battery management
• Can be used for inverter output stages in medium-voltage systems
• Ideal for power supplies and DC-DC converters
• Used with high-current switching in battery management
• Can be used for inverter output stages in medium-voltage systems
What gate voltage limits must be observed?
The device must not exceed ±16V between gate and source to avoid gate-oxide stress.
How does thermal range affect deployment?
It operates across -55 °C to 175 °C, permitting use in harsh thermal conditions and elevated junction scenarios.
What is the forward conduction characteristic when the body diode conducts?
The forward voltage is typically 1.3V during diode conduction, influencing loss calculations in synchronous or freewheeling intervals.
What package and mounting considerations apply for heat dissipation?
It is supplied in a TO-220 through-hole format which facilitates direct heatsink attachment for improved thermal management.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3006PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP3006PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFB3006PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220