ROHM RSJ250P10 Type P-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-263 RSJ250P10TL
- N° de stock RS:
- 124-6823
- Référence fabricant:
- RSJ250P10TL
- Fabricant:
- ROHM
Ajoutez 25 de plus pour économiser 9,60 €
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
10,02 €
(TVA exclue)
12,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 24 mars 2027
Unité | Prix par unité | le paquet* | Économie |
|---|---|---|---|
| 5 - 20 | 2,004 € | 10,02 € | - |
| 25 - 45 | 1,62 € | 8,10 € | 9,60 € |
| 50 - 120 | 1,54 € | 7,70 € | 23,20 € |
| 125 - 245 | 1,46 € | 7,30 € | 68,00 € |
| 250 + | 1,296 € | 6,48 € | 177,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-6823
- Référence fabricant:
- RSJ250P10TL
- Fabricant:
- ROHM
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RSJ250P10 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Width | 9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RSJ250P10 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Width 9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- KR
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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