onsemi NDT Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 124-1725
- Référence fabricant:
- NDT2955
- Fabricant:
- onsemi
Sous-total (1 bobine de 4000 unités)*
792,00 €
(TVA exclue)
960,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- 76 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,198 € | 792,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1725
- Référence fabricant:
- NDT2955
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NDT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Width | 3.56 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-65-550 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NDT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Width 3.56 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-65-550 | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-223 NDT2955
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-223 NTF2955T1G
- Infineon P-Channel MOSFET 60 V, 3-Pin SOT-223 ISP25DP06LMSATMA1
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-223 NDT014L
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-223 NVF3055L108T1G
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-223 NTF3055L108T1G
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-223 NDT3055L
- onsemi P-Channel MOSFET 20 V, 3-Pin SOT-223 NTF6P02T3G
