onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223

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2 256,00 €

(TVA exclue)

2 728,00 €

(TVA incluse)

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la bobine*
4000 +0,564 €2 256,00 €

*Prix donné à titre indicatif

N° de stock RS:
124-1359
Référence fabricant:
NDT456P
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-223

Series

NDT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

54mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3W

Minimum Operating Temperature

-65°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

47nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

1.7mm

Standards/Approvals

No

Width

3.7 mm

Length

6.7mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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