onsemi PowerTrench Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 124-1695
- Référence fabricant:
- FDB3632
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
1 285,60 €
(TVA exclue)
1 555,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 1,607 € | 1 285,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1695
- Référence fabricant:
- FDB3632
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
Automotive N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin D2PAK FDB3632
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin D2PAK FDB035N10A
- onsemi PowerTrench N-Channel MOSFET 80 V, 7-Pin D2PAK FDB024N08BL7
- onsemi PowerTrench N-Channel MOSFET 60 V, 3-Pin D2PAK FDB050AN06A0
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB110N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB075N15A
- onsemi PowerTrench N-Channel MOSFET 60 V, 3-Pin D2PAK FDB035AN06A0
- onsemi PowerTrench N-Channel MOSFET 75 V, 3-Pin D2PAK FDB088N08