onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23

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Offre groupée disponible

Sous-total (1 bobine de 3000 unités)*

327,00 €

(TVA exclue)

396,00 €

(TVA incluse)

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Temporairement en rupture de stock
  • 3 000 unité(s) expédiée(s) à partir du 29 avril 2026
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Unité
Prix par unité
la bobine*
3000 - 60000,109 €327,00 €
9000 - 120000,106 €318,00 €
15000 - 270000,103 €309,00 €
30000 - 570000,10 €300,00 €
60000 +0,098 €294,00 €

*Prix donné à titre indicatif

N° de stock RS:
124-1692
Référence fabricant:
2N7002
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

2N7002

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200mW

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

223nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.93mm

Length

2.92mm

Width

1.3 mm

Automotive Standard

AEC-Q100, AEC-Q200, AEC-Q101

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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