Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1
- N° de stock RS:
- 110-7458
- Référence fabricant:
- IPB117N20NFDATMA1
- Fabricant:
- Infineon
Sous-total (1 ruban de 2 unités)*
4,51 €
(TVA exclue)
5,458 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 + | 2,255 € | 4,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7458
- Référence fabricant:
- IPB117N20NFDATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS FD | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 170°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS | |
| Width | 9.45 mm | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS FD | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 170°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS | ||
Width 9.45 mm | ||
Length 10.31mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
Statut RoHS non applicable
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB320N20N3GATMA1
- Infineon OptiMOS 6 Type N-Channel Single MOSFETs 200 V Enhancement, 3-Pin TO-263 IPB175N20NM6ATMA1
- Infineon OptiMOS FD Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS FD Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IPP220N25NFDAKSA1