STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 STW26NM60N
- N° de stock RS:
- 103-1991
- Référence fabricant:
- STW26NM60N
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
130,68 €
(TVA exclue)
158,13 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 120 | 4,356 € | 130,68 € |
| 150 - 270 | 4,151 € | 124,53 € |
| 300 + | 3,589 € | 107,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 103-1991
- Référence fabricant:
- STW26NM60N
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -25V, +25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -25V, +25V | ||
Maximum Operating Temperature 150°C | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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