STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 151-455
- Référence fabricant:
- STW20NM60
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
13,25 €
(TVA exclue)
16,032 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 354 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,625 € | 13,25 € |
| 20 - 48 | 5,72 € | 11,44 € |
| 50 + | 4,595 € | 9,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-455
- Référence fabricant:
- STW20NM60
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.29Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 50°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.15mm | |
| Standards/Approvals | RoHS | |
| Length | 34.95mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.29Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 50°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 5.15mm | ||
Standards/Approvals RoHS | ||
Length 34.95mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET associates the multiple drain process with the company’s Power MESH horizontal layout. The resulting product has an outstanding low on resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Liens connexes
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW20NM60
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW26NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW48NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW45NM60