Vishay TrenchFET N-Channel Power MOSFET, 40 A, 80 V N, 8-Pin SO-8 SIDR178DP-T1-RE3
- N° de stock RS:
- 851-501
- Référence fabricant:
- SIDR178DP-T1-RE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
3,29 €
(TVA exclue)
3,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 3,29 € |
| 10 - 99 | 2,15 € |
| 100 - 499 | 1,51 € |
| 500 - 999 | 1,26 € |
| 1000 + | 1,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-501
- Référence fabricant:
- SIDR178DP-T1-RE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | 55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature 55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- TW
The Vishay high-performance N-Channel MOSFET, designed to enable efficient power switching applications. Its capabilities ensure reliable operation within varying voltage and current ranges.
TrenchFET technology ensures low on-resistance and high efficiency
Top side cooling improves thermal transfer capabilities
Lead-free and halogen-free construction supports environmental compliance
Fully tested for reliability with 100% R and UIS tests
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