STMicroelectronics N channel-Channel MOSFET, 125 A, 100 V Enhancement Mode, 8-Pin PowerLeaded STL125N10LF8AG
- N° de stock RS:
- 834-675
- Référence fabricant:
- STL125N10LF8AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
2 559,00 €
(TVA exclue)
3 096,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,853 € | 2 559,00 € |
| 6000 + | 0,806 € | 2 418,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 834-675
- Référence fabricant:
- STL125N10LF8AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerLeaded | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Height | 1mm | |
| Standards/Approvals | ROHS | |
| Width | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerLeaded | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Height 1mm | ||
Standards/Approvals ROHS | ||
Width 5mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET utilizes Advanced trench gate technology to optimize power density and efficiency across automotive and industrial power conversion systems.
Automotive grade qualification ensures reliable operation under extreme conditions
State of the ART figure of merit significantly reduces overall switching losses
Very low on state resistance minimizes thermal dissipation during high current conduction
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