ROHM N channel-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1
- N° de stock RS:
- 780-669
- Référence fabricant:
- SCT2H12NWBTL1
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
6,76 €
(TVA exclue)
8,18 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 3,38 € | 6,76 € |
| 20 - 98 | 2,975 € | 5,95 € |
| 100 + | 2,40 € | 4,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 780-669
- Référence fabricant:
- SCT2H12NWBTL1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 0V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2mm | |
| Length | 15.5mm | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 0V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.2mm | ||
Length 15.5mm | ||
Height 4.5mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W
Liens connexes
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