Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules, 1000 A, 2300 V Enhancement, 15-Pin XHP-2
- N° de stock RS:
- 762-890
- Référence fabricant:
- FF1300UXTR23T2M1PBPSA1
- Fabricant:
- Infineon
Visuel non contractuel
Sous-total (1 unité)*
4 373,76 €
(TVA exclue)
5 292,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 4 373,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-890
- Référence fabricant:
- FF1300UXTR23T2M1PBPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET Modules | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 1000A | |
| Maximum Drain Source Voltage Vds | 2300V | |
| Package Type | XHP-2 | |
| Series | XHP 2 | |
| Mount Type | Screw | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 1.59mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Typical Gate Charge Qg @ Vgs | 3.98μC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6.25V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Length | 140mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET Modules | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 1000A | ||
Maximum Drain Source Voltage Vds 2300V | ||
Package Type XHP-2 | ||
Series XHP 2 | ||
Mount Type Screw | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 1.59mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Typical Gate Charge Qg @ Vgs 3.98μC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6.25V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Length 140mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon CoolSiC MOSFET half bridge module features voltage rating of 2300 V and supports high current density. It features AlSiC base plate for increased thermal cycling capability and high creepage and clearance distances.
Low inductive design
Low switching losses
High power density
Liens connexes
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